4.6 Article

III-Nitride full-scale high-resolution microdisplays

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3615679

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Funding

  1. ARMY [W909MY-09-C-0014]
  2. ATT Foundation

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We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (mu LEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 degrees C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between mu LED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615679]

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