Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3650474
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Funding
- National Science Foundation (Materials World Network and Center for NanoScale Systems) [DMR-0908994, EEC-0646547]
- Corning, Inc.
- National Science Foundation [ECS-0335765]
- Alexander von Humboldt Foundation
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We exploited the concept of solvent orthogonality to enable photolithography for high-resolution, high-throughput fabrication of electronic circuits based on a polymeric semiconductor. An array of ring oscillators utilizing top contact polymer thin film transistors with 1 mu m channel length has been fabricated on a 100 mm wafer scale. We used high performance, air stable poly(2,5-bis (thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as our active semiconducting material. Owing to the small channel length and small overlap length, these devices have a signal propagation delay as low as 7 mu s/stage. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3650474]
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