Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3636435
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Funding
- NSF (ECCS)
- Office of Naval Research [N00014-09-1-0639]
- MIND, NDnano
- AD&T centers at the University of Notre Dame
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1530723] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0846910] Funding Source: National Science Foundation
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The modulation depth of two-dimensional electron-gas (2DEG) based terahertz (THz) modulators using AlGaAs/GaAs hetero-structures with metal gates is inherently limited to <30%. The metal gate not only attenuates the THz signal but also severely degrades modulation depth. Metal losses can be significantly reduced employing an alternative material with tunable conductivity. Graphene presents a unique solution to this problem due to its symmetric band structure and extraordinarily high hole mobility. In this work, we show that it is possible to achieve a modulation depth of >90% while simultaneously minimizing signal attenuation to <5% by tuning the Fermi level at its Dirac point. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636435]
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