Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3536531
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Funding
- National Basic Research Program of China
- National Natural Science Foundation of China
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A series of indium tin oxide (ITO) thin-films with various thicknesses from 2 to 200 monolayers (ML) have been epitaxially grown on LaAlO3 substrates by laser molecular-beam epitaxy. The measurements of x-ray diffraction, atomic force microscopy, four-probe method, and optical transmittance reveal that the film thickness strongly affects the structural, electrical, and optical properties of ITO thin-films, and the ITO thin-films exist at a critical thickness of metal-insulator transition at about 4-5 ML. The electrical transport property has been discussed with the different conductive models. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3536531]
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