Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3586256
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Funding
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- ESF
- DFG
- National Research Foundation of Korea [과C6B1616] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p approximate to 4.5 x 10(13) cm(-2), equivalent to the location of the Fermi level at 0.79 eV above the Dirac point E-D. (C) 2011 American Institute of Physics. [doi:10.1063/1.3586256]
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