Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3655903
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- National Science Council in Taiwan [NSC 100-3113-E-009-001-CC2]
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Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6% in comparison with 34% for conventional LED, supporting the improvement of hole transport in our design. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655903]
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