Related references
Note: Only part of the references are listed.High-Power Blue-Violet Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
Yuji Zhao et al.
APPLIED PHYSICS EXPRESS (2011)
Optical Gain Spectroscopy of a Semipolar {20(2)over-bar1}-Oriented Green InGaN Laser Diode
Yoon Seok Kim et al.
APPLIED PHYSICS EXPRESS (2011)
Influence of Mg-doped barriers on semipolar (20(2)over-bar1) multiple-quantum-well green light-emitting diodes
Chia-Yen Huang et al.
APPLIED PHYSICS LETTERS (2011)
High optical polarization ratio from semipolar (20(2)over-bar(1)over-bar) blue-green InGaN/GaN light-emitting diodes
Yuji Zhao et al.
APPLIED PHYSICS LETTERS (2011)
AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
Anurag Tyagi et al.
APPLIED PHYSICS EXPRESS (2010)
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
You-Da Lin et al.
APPLIED PHYSICS EXPRESS (2010)
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20(2)over-bar1) GaN Substrates
Shuichiro Yamamoto et al.
APPLIED PHYSICS EXPRESS (2010)
Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates
Masahiro Adachi et al.
APPLIED PHYSICS EXPRESS (2010)
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
R. M. Farrell et al.
APPLIED PHYSICS LETTERS (2010)
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
Feng Wu et al.
APPLIED PHYSICS LETTERS (2010)
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
Theeradetch Detchprohm et al.
APPLIED PHYSICS LETTERS (2010)
Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
Kathryn M. Kelchner et al.
APPLIED PHYSICS EXPRESS (2009)
Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
You-Da Lin et al.
APPLIED PHYSICS EXPRESS (2009)
Characterization of blue-green m-plane InGaN light emitting diodes
You-Da Lin et al.
APPLIED PHYSICS LETTERS (2009)
Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
Kuniyoshi Okamoto et al.
APPLIED PHYSICS LETTERS (2009)
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
W. G. Scheibenzuber et al.
PHYSICAL REVIEW B (2009)
Strain-induced polarization in wurtzite III-nitride semipolar layers
A. E. Romanov et al.
JOURNAL OF APPLIED PHYSICS (2006)