A InGaN/GaN quantum dot green (λ=524 nm) laser

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm(2) at 278 K. The slope and wall plug efficiencies are 0.74 W/A and similar to 1.1%, respectively, at 1.3 kA/cm(2). The value of T(0) = 233 K in the temperature range of 260-300 K. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3596436]