Related references
Note: Only part of the references are listed.The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices
J. J. Wierer et al.
APPLIED PHYSICS LETTERS (2010)
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
Aurelien David et al.
APPLIED PHYSICS LETTERS (2010)
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
Carl J. Neufeld et al.
APPLIED PHYSICS LETTERS (2008)
High-quality InGaN/GaN heterojunctions and their photovoltaic effects
Xinhe Zheng et al.
APPLIED PHYSICS LETTERS (2008)
Design and characterization of GaN/InGaN solar cells
Omkar Jani et al.
APPLIED PHYSICS LETTERS (2007)
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Shigefusa F. Chichibu et al.
NATURE MATERIALS (2006)
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
D Cherns et al.
APPLIED PHYSICS LETTERS (2001)
Share Paper
