Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 65, Issue 11, Pages 1765-1771Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2004.06.001
Keywords
insulating films; X-ray fluorescence; europium-indium oxide; dielectric phenomena
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Thin Eu-In solid solution oxide films (SS) were grown on Si (P) substrates to form MOS devices. The samples were characterised by X-ray fluorescence and X-ray diffraction techniques. The ac-conductance and capacitance of the devices were studied as a function of frequency in the range 500 Hz to 100 kHz, temperature in the range 293-400 K and gate voltage. The investigation established that: (1) the prepared SS exhibit a sudden reversible structural change at about 370 K, (2) the frequency dependence for f > 10 kHz of the ac-conductivity and capacitance of the insulator at room temperature is controlled by the 'corrected barrier hopping' CBH model, (3) the temperature dependence of the ac-conductance which shows a small activation energy characterises the hopping process of current carriers between equilibrium sites, and (4) the prepared transparent SS have a sufficiently high relative permittivity E, around 30, which suggests they are promising candidates for high-epsilon dielectric applications. (C) 2004 Elsevier Ltd. All rights reserved.
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