Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2

With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4 x 10(14) cm(-2), as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces. (C) 2011 American Institute of Physics. [doi:10.1063/1.3535613]