Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3650470
Keywords
carrier density; dielectric function; electron-phonon interactions; elemental semiconductors; energy gap; excitons; nanostructured materials; phonon dispersion relations; semiconductor quantum wells; semiconductor thin films; silicon
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Funding
- NC3
- Center for Nanoscale Metrology
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This study shows that the dielectric function of crystalline Si quantum wells (c-Si QW) is influenced by both carrier confinement and electron-phonon interactions. The energy shifts and lifetime broadening of the excitonic E-1 direct gap transition of c-Si QWs from 2 to 10 nm are found to have a significant dimensional and temperature dependence that can be traced to changes in the phonon dispersion of nanoscale films. The influence of electron-phonon interactions on the dielectric function was verified by altering the phonon dispersion using different dielectric layers above a 5 nm c-Si QW. (C) 2011 American Institute of Physics. [doi:10.1063/1.3650470]
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