Related references
Note: Only part of the references are listed.Carbon impurities and the yellow luminescence in GaN
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Cracking of III-nitride layers with strain gradients
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Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
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Stress relaxation in mismatched layers due to threading dislocation inclination
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Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
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Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
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