Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3584137
Keywords
-
Categories
Funding
- National Science Foundation [1106444]
- RFBR [11-02-00013]
Ask authors/readers for more resources
We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the saturation regimes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584137]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available