Related references
Note: Only part of the references are listed.Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
Han Zhao et al.
APPLIED PHYSICS LETTERS (2010)
Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
Dae-Hyun Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET
Y. Q. Wu et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 dielectric
Ning Li et al.
APPLIED PHYSICS LETTERS (2008)
Logic suitability of 50-nm In0.7Ga0.3AsHEMTs for Beyond-CMOS applications
Dae-Hyun Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-κ gate dielectrics
Yanning Sun et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Surface and interface barriers of InxGa1-xAs binary and ternary alloys
HH Wieder
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Share Paper
