4.6 Article

Strain dependent resistance in chemical vapor deposition grown graphene

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 21, Pages -

Publisher

AIP Publishing
DOI: 10.1063/1.3663969

Keywords

chemical vapour deposition; electric admittance; graphene; plastic deformation

Funding

  1. NSFC [10804002]
  2. MOST [2012CB933400, 2009CB623703]
  3. Sino Swiss Science and Technology Cooperation Program [2010DFA01810]

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The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5%, while it fails to recover after the plastic deformation at 5%. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663969]

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