Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3595342
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Funding
- National Science Foundation [61076007, 50532090, 60606023, 50825206, 10974235]
- Ministry of Science and Technology of China [2007CB936203, 2009CB929400, 2009AA033101, 2011CB302002]
- Chinese Academy of Sciences
- Diffusion Scattering Station in Beijing Synchrotron Radiation Facility
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High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595342]
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