Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3670334
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Funding
- National Basic Research Program of China (973 Program) [2011CB302006, 2011CB302002]
- National Natural Science Foundation of China [10974197, 60976036]
- Chinese Academy of Sciences
- Science and Technology Foundation of Shenzhen
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An ultraviolet photodetector was fabricated on MgZnO thin film grown by metal-organic chemical vapor deposition. The peak response of the device centers at 238 nm and cutoff wavelength is 253 nm. The peak responsivity is 129 mA/W at 15V bias, and the UV/visible reject ratio is 4 orders of magnitude. Internal gain is due to the hole trapping at interface that brings low response speed. Native defects at the Au/MgZnO interface degrade the barrier effect, which caused large dark current and high visible response. (C) 2011 American Institute of Physics. [doi:10.1063/1.3670334]
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