GaN/SiC avalanche photodiodes

Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of similar to 10(5), and responsivity exceeding 4.2 A/W at 365 nm were achieved. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636412]