Related references
Note: Only part of the references are listed.Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
Shih-Chun Ling et al.
APPLIED PHYSICS LETTERS (2010)
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
C. H. Wang et al.
APPLIED PHYSICS LETTERS (2010)
Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer
Yen-Kuang Kuo et al.
OPTICS LETTERS (2010)
Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
Yen-Kuang Kuo et al.
APPLIED PHYSICS LETTERS (2009)
Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes
Cheng-Liang Wang et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2007)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)