Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3644491
Keywords
high-frequency effects; microwave diodes; quantum interference devices; quantum well devices; resonant tunnelling diodes; terahertz wave devices
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Funding
- DFG [FE994/2]
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The nonlinear response of resonant-tunnelling diodes (RTDs) is analysed theoretically at high frequencies (HFs), which are far above the diode's tunnel-relaxation-time limit. We show that the HF I-V curve in this regime is substantially different from the static one. The calculated static and oscillation characteristics of a HF RTD oscillator are in good agreement with our measurement results. Our RTD model is applicable to RTDs working at THz frequencies. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644491]
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