Related references
Note: Only part of the references are listed.Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy
Yutaka Hoshina et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate
Szu-Lin Cheng et al.
OPTICS EXPRESS (2009)
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Xiaochen Sun et al.
OPTICS LETTERS (2009)
Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metalorganic chemical vapor deposition
Yu Bai et al.
JOURNAL OF APPLIED PHYSICS (2008)
Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)
Y. -Y. Fang et al.
APPLIED PHYSICS LETTERS (2007)
Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications -: art. no. 011110
JF Liu et al.
APPLIED PHYSICS LETTERS (2005)