Extraordinary infrared photoluminescence efficiency of Er0.1Yb1.9SiO5 films on SiO2/Si substrates

Extraordinary infrared photoluminescence efficiency was found for Er2SiO5 film by optimizing the composition of Yb additions on SiO2/Si substrates. Above two orders of magnitude enhanced 1.53 mu m Er3+ photoluminescence for the Er0.1Yb1.9SiO5 film on SiO2/Si substrate was obtained by pumping at 980 nm compared with pure Er2SiO5 film on Si substrate at 654 nm. All Er ions for Er0.1Yb1.9SiO5 film are optically active. The decreased nonradiative transient rate leads to extraordinary photoluminescence efficiency in the Er0.1Yb1.9SiO5 film. It indicated that the Er0.1Yb1.9SiO5 film is the sought candidate material for compact waveguide amplifiers and emitters in silicon photonics integration. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554750]