Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3549191
Keywords
-
Categories
Funding
- Australian Research Council [DP0879940]
- Australian Research Council [DP0879940] Funding Source: Australian Research Council
Ask authors/readers for more resources
Conventional silicon devices are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon such as Si-XII and Si-III can be formed under pressure applied by nanoindentation and these phases are metastable at room temperature and pressure. We demonstrate in this letter that such phases exhibit different electrical properties to normal (diamond cubic) silicon and exploit this to perform maskless, room temperature, electrical patterning of silicon by writing both conductive and insulating zones directly into silicon substrates by nanoindentation. Such processing opens up a number of potentially new applications without the need for high temperature processing steps. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549191]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available