Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3597299
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Funding
- Converging Research Center Program, WCU (World Class University )
- Ministry of Education, Science and Technology [2010K000977, R31-2008-000-10075-0, 2009-0081961]
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The change in the transfer characteristics of amorphous In-Ga-Zn-O thin film transistors (TFTs) was investigated under light illumination at various wavelengths. The variations in the interfacial trap density (D-it) were also studied using metal-insulator-semiconductor capacitors. The transfer characteristics of the TFTs were dependent on the wavelength of illuminated light. The increase in subthreshold swing observed under light illumination of wavelengths below 550 nm (similar to 2.3 eV) was confirmed to be related to the increase in D-it near the conduction band edge. This D-it increase is caused by doubly ionized oxygen vacancies (V-O(2+)) that are temporarily generated under light illumination. (c) 2011 American Institute of Physics. [doi:10.1063/1.3597299]
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