4.6 Article

Phase transitions in ferroelectric silicon doped hafnium oxide

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 11, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3636434

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Funding

  1. European Community
  2. Free State of Saxony

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We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636434]

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