Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3644988
Keywords
aluminium compounds; gallium arsenide; III-V semiconductors; infrared spectra; Schottky barriers; semiconductor quantum wells; terahertz waves
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Ultrashort terahertz pulses in the far-infrared spectral region centered around 2 THz are used to coherently control an intersubband polarization in a GaAs/AlGaAs quantum well structure at low temperature. While the first pulse excites a macroscopic polarization, a second temporally delayed pulse switches the polarization off or refreshes it depending on the relative time delay. The switching is directly demonstrated in the time-domain for the few picosecond long free-induction decay of the induced polarization. Model calculations based on the optical Bloch equations agree well with the experimental data. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644988]
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