Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 18, Pages 4205-4207Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1812577
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We demonstrate a complementary-like inverter comprised of two identical ambipolar field-effect transistors based on the solution processable methanofullerene [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM). The transistors are capable of operating in both the p- and n-channel regimes depending upon the bias conditions. However, in the p-channel regime transistor operation is severely contact limited. We attribute this to the presence of a large injection barrier for holes at the Au/PCBM interface. Despite this barrier the inverter operates in both the first and third quadrant of the voltage output versus voltage input plot exhibiting a maximum gain in the order of 20. Since the inverter represents the basic building block of most logic circuits we anticipate that other complementary-like circuits can be realized by this approach. (C) 2004 American Institute of Physics.
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