Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3643899
Keywords
boron compounds; graphene; III-V semiconductors; nanosensors; pressure sensors; semiconductor heterojunctions; tunnelling; wide band gap semiconductors
Categories
Funding
- NSFC [61006077, 60977043, 10834004]
- NBRPC [2007CB613405]
- NSF [1002228]
- ZJU
- SRFDP [20100101120045]
- FANEDD [200950]
- Fundamental Research Funds for the Central Universities
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1002228] Funding Source: National Science Foundation
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An in-plane pressure sensor (IPPS) consisting of graphene sandwiched by hexagonal boron nitride (h-BN) and a tunneling pressure sensor (TPS) consisting of h-BN sandwiched by graphene are demonstrated. The responses as function of external pressure are modeled. The current varies by 3 orders of magnitude as pressure increases from 0 to 5 nN/nm(2). The IPPS current is negatively correlated to pressure, whereas TPS current exhibits positive correlation to pressure. The IPPS design is insensitive to the number of wrapping h-BN layers, indicating precise process control is unnecessary. The result paves a viable avenue towards realizing of atomic scale pressure sensors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3643899]
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