Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3591976
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Funding
- Center for Energy Efficient Materials (CEEM) at UCSB
- U.S. DOE
- DARPA High Performance InGaN-Based Solar Cells Program
- California Advanced Solar Technologies Institute (CAST)
- Solid State Lighting and Energy Center (SSLEC)
- NSF MRSEC
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We demonstrate high quantum efficiency InGaN/GaN multiple quantum well (QW) solar cells with spectral response extending out to 520 nm. Increasing the number of QWs in the active region did not reduce the carrier collection efficiency for devices with 10, 20, and 30 QWs. Solar cells with 30 QWs and an intentionally roughened p-GaN surface exhibited a peak external quantum efficiency (EQE) of 70.9% at 390 nm, an EQE of 39.0% at 450 nm, an open circuit voltage of 1.93 V, and a short circuit current density of 2.53 mA/cm(2) under 1.2 suns AM1.5G equivalent illumination. (C) 2011 American Institute of Physics. [doi:10.1063/1.3591976]
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