Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3628315
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Funding
- Office of Naval Research (ONR) [00075094]
- National Science Foundation (NSF) [1005301]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0851707] Funding Source: National Science Foundation
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Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene. (C) 2011 American Institute of Physics. [doi:10.1063/1.3628315]
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