Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3599708
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Funding
- U. S. National Science Foundation [0906539]
- Office of Energy Research, Materials Sciences and Engineering Division of the U. S. Department of Energy [DE-AC02-05CH11231]
- Office of Naval Research MURI [N00014-09-1-1066]
- National Science Foundation
- Grants-in-Aid for Scientific Research [23246116, 19053008, 23310096] Funding Source: KAKEN
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0906539] Funding Source: National Science Foundation
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Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm(2)/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599708]
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