Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3600333
Keywords
annealing; epitaxial layers; metal-insulator transition; vanadium compounds
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Funding
- National Science Foundation [ECS-0801985]
- Division of Scientific User Facilities, Office of Basic Energy Science, U.S. Department of Energy
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Vanadium dioxide (VO2) in bulk, thin-film, and nanostructured forms exhibits an insulator-to-metal transition accompanied by structural reorganization, induced by temperature, light, electric fields, doping, or strain. We have grown epitaxial films of VO2 on c-cut (0001) sapphire following two different procedures: (1) room-temperature growth followed by annealing and (2) direct high-temperature growth. We find that variations in strain at the film-substrate interface in the two protocols leads to differences in morphologies and transition characteristics. Our results show that room-temperature-grown epitaxial films have smoother morphologies and better switching contrast, analogous to the enhanced performance of epitaxially grown compound semiconductors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600333]
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