Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3571289
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Funding
- EPSRC [EP/D50225X, EP/H029583, EP/F029543]
- Egyptian government
- EPSRC [EP/E048811/1, EP/D50225X/1, EP/F029543/1, EP/H029583/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E048811/1, EP/D50225X/1, EP/F029543/1, EP/H029583/1] Funding Source: researchfish
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We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm wavelength. The InGaAs resistivity and the sensitivity of photoconductive detection are both found to depend on the Fe-doping level. We investigate a wide range of probe laser powers, finding a peak in detected signal for similar to 5 mW probe power, followed by a reduction at larger powers, attributed to screening of the detected THz field by photo-generated carriers in the material. The measured signal from Fe: InGaAs photoconductive detectors excited at 800 nm is four times greater than that from a low-temperature-grown GaAs photodetector with identical antenna design, despite the use of a ten times smaller probe power. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571289]
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