Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3615285
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Funding
- CARIPLO Foundation
- FWF [SFB025]
- Austrian Science Fund (FWF) [F 2502] Funding Source: researchfish
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The onset of plastic relaxation in SiGe islands grown on pit-patterned Si(001) substrates is investigated using elasticity theory solved by finite element methods. Larger critical island volumes with respect to the unpatterned case are predicted. A justification based on the qualitatively different stressors acting on the substrate in the presence of pits is provided. Experimental results in terms of critical SiGe-island volumes as a function of the Ge content are nicely reproduced by the model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615285]
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