Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3572025
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Funding
- French program ANR under the DefiZnO project [ANR-09-MAPR-009]
- CEA/CNRS [C12899/047588]
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We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-plane ZnO and ZnO:N films over a large temperature range. The nonintentionally doped ZnO layers exhibit a residual doping as low as similar to 10(14) cm(-3). Despite an effective incorporation of nitrogen, p-type doping was not achieved, ZnO:N films becoming insulating. The high purity of the layers and their low residual n-type doping evidence compensation mechanisms in ZnO:N films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3572025]
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