Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3615279
Keywords
-
Categories
Funding
- Office of Naval Research
Ask authors/readers for more resources
In a multi-layer heterojunction system, the interface responsible for trap charging is spatially displaced from the two-dimensional charge gas, in contrast to the typical SiO(2)/Si capacitor. This displacement causes the effective trap capacitance to occur in a different configuration than that of the SiO(2)/Si system that Terman originally considered. The adaptation of Terman's high frequency capacitance-voltage method for interface trap density extraction is developed for the heterojunction multi-layer capacitor. [doi: 10.1063/1.3615279]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available