Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1-x alloys

Energies of E-0 and E-0 + Delta(SO) transitions in In0.53Ga0.47BixAs1-x alloys with 0 < x <= 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E-0 transition shifts to longer wavelengths (similar to 50 meV/% of Bi), while the E-0 + Delta(SO) transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669703]