4.6 Article

Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films

Journal

APPLIED PHYSICS LETTERS
Volume 98, Issue 26, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3604782

Keywords

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Funding

  1. U.S. Army Research Office [W911NF-10-1-0159]
  2. Div Of Engineering Education and Centers
  3. Directorate For Engineering [0851987] Funding Source: National Science Foundation

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Amorphous Zn1-xMgxO (alpha-Zn1-xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the alpha-Zn1-xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1-xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604782]

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