Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3646388
Keywords
doping profiles; gallium; II-VI semiconductors; thin film transistors; wide band gap semiconductors; zinc compounds
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Funding
- Ministry of Knowledge Economy(MKE)
- Korea Institute for Advancement in Technology (KIAT)
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [CAFDC-20110001139]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10041222] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Public Safety & Security (MPSS), Republic of Korea [2008-A06-007] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0009898] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the Ga doping effect on the performance and negative bias illumination instability of sol-gel zinc tin oxide (ZTO) thin film transistors (TFTs). The performance of the Ga doped ZTO (GZTO) TFTs is controlled and optimized by the concentration of Ga ions, which suppress the formation of oxygen vacancies. The negative bias illumination instability of the devices with a sol-gel hybrid material passivation layer is compared through a time-evolution stress analysis and illumination wavelength dependence measurements. The GZTO TFT exhibits improved stability relative to the ZTO TFT, because Ga ions effectively decrease charge trapping sites originating from oxygen vacancies. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646388]
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