Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3609873
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- National Science Council of the Republic of China [NSC99-2120-M-110-001, NSC 97-2112-M-110-009-MY3]
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This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress. The larger V-t shift under positive AC gate-bias stress when compared to DC operation indicates that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period. In contrast, the degradation behavior under illuminated negative gate-bias stress exhibits the opposite degradation tendency. Since electron and hole trapping are the dominant degradation mechanisms under positive and illuminated negative gate-bias stress, respectively, the different degradation tendencies under AC/DC operation can be attributed to the different trapping efficiency of electrons and holes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609873]
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