Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3601487
Keywords
amorphous state; electric breakdown; electrical resistivity; hafnium compounds; high-k dielectric thin films; optical constants; permittivity; short-range order; sputter deposition
Categories
Funding
- Centre for Advanced Photonics and Electronics (CAPE)
- EPSRC through the Cambridge Integrated Knowledge Centre [EP/E023614/1, TS/G001960/1]
- Engineering and Physical Sciences Research Council [TS/G001960/1, EP/E023614/1] Funding Source: researchfish
- EPSRC [EP/E023614/1, TS/G001960/1] Funding Source: UKRI
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Amorphous hafnium oxide (HfOx) is deposited by sputtering while achieving a very high k similar to 30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfOx (cubic k similar to 30). The films also possess a high electrical resistivity of 10(14) Omega cm, a breakdown strength of 3 MV cm(-1), and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate (similar to 25 nm min(-1)) makes these high-k amorphous HfOx films highly advantageous for plastic electronics and high throughput manufacturing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601487]
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