High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Amorphous hafnium oxide (HfOx) is deposited by sputtering while achieving a very high k similar to 30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfOx (cubic k similar to 30). The films also possess a high electrical resistivity of 10(14) Omega cm, a breakdown strength of 3 MV cm(-1), and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate (similar to 25 nm min(-1)) makes these high-k amorphous HfOx films highly advantageous for plastic electronics and high throughput manufacturing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601487]