Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3601020
Keywords
ab initio calculations; bismuth compounds; carrier density; ferromagnetic materials; magnetic moments; magnetisation; magnetoelectric effects; manganese; surface states; topological insulators
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Funding
- National Basic Research Program of China (973 program) [2007CB613302]
- National Natural Science Foundation of China [10774091, 20973102]
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The ferromagnetism and topological surface states manipulated by manganese in topological insulator Bi2Te3 are investigated by means of first-principles calculations. Our results indicate that substitution Mn for Bi can induce spin-polarized hole states with a total magnetic moments of 4.0 mu(B), and sufficient hole carrier density is required to obtain sustained magnetization. The obvious gap at the Dirac point coinciding with sharp surface state appears as Mn doped into Bi2Te3 because the magnetic interactions break the time reversal symmetry. The study paves a way to explore topological magnetoelectric effect and spintronic device applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601020]
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