A poly-silicon TFT witha sub-5-nm thick channel for low-lower gain cell memory in mobile applications

This paper presents a gain-cell solution in which a novel ultrathin polysilicon film transistor provides the basis for dense and low-power embedded random-access memory (RAM). This is made possible by the new transistor's 2-nm-thick channel, which realizes a quantum-confinement effect that produces a low leakage current value of only 10(-19) A at room temperature. The memory has the potential to solve the power and stability problems that static RAM (SRAM) is going to face in the very near future.