Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3569138
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Funding
- National Natural Science Foundation of China [10774090]
- National Basic Research Program of China [2007CB936602]
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Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility in both the circular and rectangular AlGaN/AlN/GaN HFETs. Moreover, the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructures is relatively weaker compared to that in AlGaN/GaN heterostructures, which is attributed to the AlN interlayer in AlGaN/AlN/GaN heterostructures to enlarge the average distance between the 2DEG electrons and the polarization charges. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569138]
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