Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3662404
Keywords
-
Categories
Funding
- European Commission (EU) [211821]
Ask authors/readers for more resources
We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 degrees C, we find an increase in surface passivation quality, corresponding to a decreased dangling bond density. Due to the combined chemical and field effect passivation of the intrinsic/n-type a-Si: H layer stack, we obtained minority carrier lifetimes with a value as high as 13.3 ms at an injection level of 10(15) cm(-3). For higher annealing temperatures, a decreased passivation quality is observed, which is attributed to hydrogen effusion. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662404]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available