Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3655995
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Funding
- NSF [DMR10-05851, 1002114]
- AFOSR [FA9550-10-1-0129]
- DARPA MESO
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1005851] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1002072] Funding Source: National Science Foundation
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Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655995]
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