Related references
Note: Only part of the references are listed.Electrode dependence of filament formation in HfO2 resistive-switching memory
Kuan-Liang Lin et al.
JOURNAL OF APPLIED PHYSICS (2011)
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
Kyung Min Kim et al.
NANOTECHNOLOGY (2011)
Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications
Yingtao Li et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Model of metallic filament formation and rupture in NiO for unipolar switching
Hyung Dong Lee et al.
PHYSICAL REVIEW B (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
Xun Cao et al.
JOURNAL OF APPLIED PHYSICS (2009)
Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
Myoung-Jae Lee et al.
NANO LETTERS (2009)
Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories
Nuo Xu et al.
APPLIED PHYSICS LETTERS (2008)
A chemically driven insulator-metal transition in non-stoichiometric and amorphous gallium oxide
Lakshmi Nagarajan et al.
NATURE MATERIALS (2008)
Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures
R. Dong et al.
APPLIED PHYSICS LETTERS (2007)
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
K. Kinoshita et al.
APPLIED PHYSICS LETTERS (2006)
Improvement of resistive memory switching in NiO using IrO2
D. C. Kim et al.
APPLIED PHYSICS LETTERS (2006)
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
BJ Choi et al.
JOURNAL OF APPLIED PHYSICS (2005)
Reproducible resistance switching in polycrystalline NiO films
S Seo et al.
APPLIED PHYSICS LETTERS (2004)
Share Paper
