Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate

We demonstrated a flexible resistive random access memory (FReRAM) device using a solution-processed TiOx active layer with an Al top electrode on an Ag layer-inserted indium-zinc-tin-oxide (IAI)-coated polyethersulfone substrate (Al/TiOx/IAI). Its feasibility of FReRAM application was evaluated through the comparison of electrical and mechanical characteristics with devices having different structure such as Ag/TiOx/Ag, Al/TiOx/indium-tin-oxide, and Al/TiOx/Al. As a result, our FReRAM device exhibited greater FReRAM performance such as stable memory characteristics under mechanically bent conditions and robustness to repetitive bending cycles. In addition, the device was thermally stable up to 85 degrees C, despite its flexible electrode and polymer substrate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621826]