Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3640226
Keywords
chemical vapour deposition; dislocation density; gallium compounds; III-V semiconductors; nanofabrication; semiconductor growth; silicon; substrates
Categories
Funding
- Bureau of Energy, Ministry of Economic Affairs of R.O.C. [100-2221-E-006-040-MY2, 100-D0204-6]
- LED Lighting and Research Center, NCKU, Taiwan
Ask authors/readers for more resources
Nano epitaxial growth (NEG) is used to develop GaAs monolithic hetero-epitaxy onto Si (001). For the GaAs grown in a nanopatterned trench with an aspect ratio of 5, the dislocations originally generated at the GaAs/Si interface are mostly isolated by the SiO2 sidewall. Compared with the conventional-planar Si substrate, implementing the NEG technique is able to decrease the dislocation density from about 10(9) cm(-2) to almost zero. It is also confirmed that NEG is capable of confining the dislocations within the GaAs initial epitaxial layer (<100 nm), which meets the requirement of relatively less complicated epitaxial processes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3640226]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available